• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
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  • 优先权
    • 专利摘要:
    A low noise infrared photodetector has an epitaxial heterostructure that includes a photodiode and a transistor. The photodiode comprises a high sensitivity low band gap photodetector layer of a first conductivity type, and a collection well of a second conductivity type in contact with a photodetector layer. The transistor includes the collection well, a transfer well of a second conductivity type that is spaced from the collection well and the photodetector layer, and a region of a first conductivity type between the collection and transfer wells. . The collection well and the transfer well are of different depths, and are formed by single diffusion.
    公开号:BE1022951B1
    申请号:E2015/5342
    申请日:2015-06-04
    公开日:2016-10-21
    发明作者:Peter E. Dixon；Navneet Masaun
    申请人:Sensors Unlimited, Inc.；
    IPC主号:
    专利说明:

    LOW NOISE HYBRID DETECTOR USING LOAD TRANSFER
    DECLARATION OF GOVERNMENT INTEREST
    This invention was made with the support of the Government under No. contract N00014-12-C-0375 awarded by the Maritime Research Bureau.
    The government has certain rights to this invention.
    HISTORICAL
    This invention generally relates to a device for detecting radiation in the near infrared (IR) spectrum. In particular, this invention relates to a low-noise IR detector that operates by charge transfer, instead of charging and resetting a capacitor through which the voltage is read.
    Modern infrared (IR) imaging systems may be focal plane matrix detectors with an associated integrated circuit in each pixel that converts the collected signals into a visual form or any analysable form. Near-IR detection systems that operate in the wavelength region of 1 to 1.7 qm are sometimes associated with visible detection systems that operate in the wavelength range of 400 to 700 nm. improve detection and visualization in low light scenarios or at dusk. The combined imaging capability in the visible and near IR is becoming more and more of a strategic necessity for both commercial and military applications. Among the many materials used for imaging systems that operate in the near infrared (eg HgCdTe, Ge, InSb, PtSi, etc.), InGaAs pin photodiodes have been chosen for their high performance and reliability (G Olsen, et al., "A 128X128 InGaAs detector array for 1.01.7 microns," in Proceedings SPIE, Vol 1341, 1990, pp. 432-437).
    Short Wavelength Infrared Imaging Arrays (SWIRs) are typically hybrid devices when photodiodes are interconnected to integrated silicon transistor readout circuits (ROICs).
    In another embodiment, an infrared photodetector includes a low band gap layer of a first conductivity type, a band gap layer of a first conductivity type on the low band gap layer, and a second band gap band. low bandgap layer on part of the second high bandgap layer. A transfer well of a second conductivity type is located in the second low band gap layer and the high band gap layer. The transfer well is separated laterally from the collection well and vertically from the first low bandgap layer. The electrodes are positioned to effect a charge transfer from the collection well to the transfer well.
    In another embodiment, a method for creating an infrared photodetector comprises depositing a large bandgap layer of a first conductivity type on a low bandgap layer of a first conductivity type and forming a protruding layer on a part of the large bandgap layer. In a single diffusion step, a collection well of a second conductivity type is formed in a high band gap layer, and the first low band gap layer, and a second conductivity type transfer well is formed in the protruding layer and the large bandgap layer. The transfer is separated laterally from the collection well and vertically from the first low bandgap layer. The electrodes on the low bandgap layer are formed to allow charge transfer from the collection well to the transfer well.
    BRIEF DESCRIPTION OF THE FIGURES
    FIG. 1 is a schematic illustration of the architecture of a photodetector / transistor device of the invention.
    FIGs. 2A-2C are illustrations showing the operation of the photodetector of the invention.
    FIG. 3 is a schematic illustration of a photodetector and the related integrated reading circuit (ROIC) of the invention.
    In an effort to reduce costs and simplify manufacturing complexity, an InGaAs / InP photodiode has been integrated into an InP junction field effect transistor (JFET) as a switch for each pixel as described in US Pat. 6,005,266, Forrest et al. (which is incorporated herein by reference in its entirety). The combination of photodiode and FET on a single substrate allows the formation of near IR focal plane arrays with reduced production cost and improved performance. The InP junction field effect demonstrated current leakage as low as 2pA. In works of the same nature, it has been demonstrated that intentional doping of the absorbing layer of a p-i-n GaAs photodiode reduces the black current as described in US Pat. 6,573,581, Sugg. et al. (which is incorporated herein by reference in its entirety).
    In the previous detectors, the charge-induced light is collected in a single area which is then transferred to an external capacitor where the voltage on the capacitor is measured. The capacitor is then "reset" before the next measurement. Since it is difficult to completely reset a capacitor in a finite period of time, and the collection area can collect the charge during the read operation itself, opportunities exist for a variation in the amount signal read.
    ABSTRACT
    An infrared photodetector comprises a low bandgap layer of a first conductivity type; a high bandgap layer of a first conductivity type covering the low bandgap layer; a collection well of a second conductivity type in the high band gap layer and in contact with the low bandgap layer so that the low bandgap layer and the connection well form an infrared photodiode; a protruding layer on a part of the large bandgap layer; a transfer well of a second conductivity type in the protruding layer and the high bandgap layer and spaced from the collection well and the low bandgap layer; and a transistor that includes the collection well, the transfer well, and a region between the collection well and the transfer well.
    FIGs. 4A-4G are schematic illustrations of the training steps of the invention.
    FIGs. 5A and 5B illustrate alternative versions of the photodetector / transistor device.
    DETAILED DESCRIPTION
    FIG. 1 illustrates the device 10, which comprises a short-wavelength infrared integrated photodetector PD and a low-noise, epitaxial multilayer field effect transistor T1. This device architecture uses an area for charge collection is a separate area for load measurement. In addition, there is no need for a capacitor for the measurement of the signal level. Although the device 10 will be described based on the InGaAs / InP hardware technology and device, the methods and features presented herein should not be limited to this hardware-only system, and other semiconductor materials, including Other semiconductor materials of compounds III-V and II-VI are within the scope of the invention.
    The device 10 is a multilayer structure comprising n basic type or high bandgap substrate layer 12, n type of low bandgap photodetector layer 14, n type of high bandgap layer 16, a low protruding layer forbidden band 18, a p-type collection well 20, a p-type transfer well 22, a source contact 24, a transfer gate contact 26 and a drain contact 28, and an insulating layer 30. n-type 14 and the collection well 20 form a PD photodiode short infrared wavelengths (SWIR). The layers 14, 16 and 18, the collection well 20, the transfer well 22, the source electrode 24, the gate transfer electrode 26 and the drain electrode 28 form a lateral junction field effect transistor. (JFET) T1.
    In one embodiment, the n-type high bandgap substrate layer 12 is InP with a band gap of about 1.344 eV. The n-14 low band gap layer is InGaAs with a thickness of about 3 to 3.5 μm and a band gap of about 0.74 eV. The n-type high bandgap layer 16 is InP with a thickness of about 0.5 to 1 μm and a band gap of about 1.344 eV. The protruding layer with a small band gap 18 is InGaAs with a thickness of about 0.5 μm or less and a band gap of about 0.74 eV.
    In this embodiment, the P-type collection well 20 is formed by diffusion in the InP layer 16 and the InGaAs layer 14. Therefore, the connection well 20 has a two-layer structure comprising the layers 20A and 20B. The layer 20A of the connection well 20 is InP with a thickness of about 0.5 to 1.0 μm. The layer 20B of the connection well 20 is InGaAs with a thickness of about 0.25 μm. The transfer well 22 is formed by diffusion in the protruding layer 18 and the high bandgap layer 16. Therefore, the transfer well 22 has a two-layer structure comprising the layers 22A and 22B. The layer 22A of the transfer well 22 is InGaAs with a thickness of about 0.5 μm or less. The layer 22B of the transfer well 44 is InP with a thickness of about 0.05 μΜ. The source electrode 24, the gate transfer electrode 26 and the drain electrode 28 may be Au, Cu, Ag, Pd, Pt, Ni and others known in the art. .
    The schematic figures illustrating the operation of a device 30 are illustrated in FIGs. 2A-2C. The device operates by collecting photoinduced media in a P-type collection well of the T1 photodiode. The collected charge is transferred by a transistor T1 from the collection well (which acts as a source region of T1) to the transfer well 22 (which acts as a drain region T1). The charge in the transfer well 22 can then be read without affecting the generation and collection of support by the PD photodiode.
    In FIG. 2A, the SWIR radiation is absorbed by the high sensitivity photodetector layer 14 and produces photoinduced supports c. In FIGs. 2A and 2B, the carriers are driven to the collection well 20 as indicated by the arrows a, and are scanned through the pn junction formed by the n-type photodetection layer 14 and the collection well 20. As shown FIGs. 2B and 2C the supports in the collection well 20 are transferred to a transfer well 22 as schematically illustrated by the arrow d. A positive voltage on the electrode of the reverse transfer gate 26 towards the p-type, the underlying large bandgap layer 16 between the collection well 20 and the transfer well 22. the collection well 20 to move to the transfer well 22. The charges in the transfer well 22 can then be sampled by an external ROIC circuit. There is a complete charge transfer and no reclosing noise produced during the transfer.
    FIG. 3 illustrates the device 10 with part of the ROIC circuit. The transistor T1 of the device 10 forms a transistor of a transistor architecture (5T) used by the ROIC to acquire a photosignal produced by the photodiode PD of the device 10 for the measurement. In a SWIR array, there will be a device array 30, with associated 5T circuits. The photosignals are delivered by the 5T circuits to the additional signal measurement and processing circuit (not shown).
    The circuit 5T of FIG. 3 comprises field effect transistors T1-T5 and optionally a capacitor C1. The transistor T2 is a resetting transistor that is activated to reset the device 10 for the next charge and read transfer cycle by connecting the transfer well 22 to the ground. This resets the transfer well 22 before the next support transfer from the collection well 20.
    The transistor T3 has its gate connected to the drain contact 28 of the device 10. The transistor T3 acts as a follower source, its source voltage being a function of the charge in a transfer well 22.
    Transistors T4 and T5 are sample select and column select switches, respectively, which select the photosignal that is delivered to other ROICs. Capacitor C1 is used if it is desired to perform sample or column selection sequentially rather than simultaneously. In this case, the voltage at the source of T3 is stored in the capacitor C1 and then read by activating the column selection transistor T5.
    A method of producing the device 10 is illustrated in FIGS. 4A-4G, wherein the collection well 20 and the transfer well 22 are formed with a single diffusion. The protruding layer 18 allows the transfer well 22 to be shallower than the collection well 20. Therefore, the p-type collection well 20 contacts the n-type low bandgap layer 14 to form the photodetector PD. The P-type transfer well 22, on the other hand, is located on the protruding layer 18 and the large bandgap layer 16. The pn junction formed by the transfer well 22 and the large bandgap layer 16 is unresponsive. not to SWIR radiation.
    The starting material illustrated in FIG. 4A and a multilayer heterostructure composed of layers 12, 14 and 16. As an example, layers 12 and 16 may be InP, and layer 14 may be InGaAs. The compositions and thicknesses of a specific embodiment have already been described. The heterostructure may be formed by an epitaxial growth method known in the art. Examples include organometallic vapor phase epitaxy (OMVPE), organometallic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and others known in the art. A preferred technique is MOCVD. In other embodiments, the layer 14 may also be the substrate of the device, and the layer 12 is not present.
    In the next step, as shown in FIG. 4B, the protruding layer 18 is deposited on the layer 16. In FIG. 4C, portions of the protruding layer 18 have been removed. This can be done with a photoresist mask or etch, or other selective removal technique.
    As shown in FIG. 4D, the insulating layer 30 has been deposited on the upper surface of the layer 16 and on the protruding layer 18. The insulating layer 30 is, for example, silicone nitride or silicone oxynitride. . The insulator layer 30 is an electrical insulator, and also functions as a diffusion barrier.
    In FIG. 4E, diffusion windows 40 and 42 have been formed in the insulating layer 30. The window 40 defines an opening through which a p-type dopant can be introduced for the collection well 20. The window 42 defines an opening through which a p-type dopant can be introduced to form the transfer well 22.
    In FIG. 4F, a diffusion step was performed to form the collection well 20 and the transfer well 22. In the case of the collection well 20, the p-type dopant diffuses through the large bandgap layer 16 into the upper part of the low-band gap layer 14. In the case of a transfer well 22, the p-type dopant must first diffuse through the protruding layer 18 before reaching the high-bandgap layer 16 The diffusion rate of the p-type dopant is lower in the protruding layer 18 than in the high bandgap layer 16. Therefore, the transfer well 22 is confined to the protruding layer 18 and the upper part of the In this way, the collection well 20 and the transfer well 22 are formed with a single diffusion, but have different depths.
    In the final step, as shown in FIG. 4G, the contact regions are defined by the photolithography and the source contact 24, the gate transfer contact 26 and the drain contact 28 are deposited on the collection well 20, the insulating layer 30, and the protruding layer 18, respectively. The contacts 24, 26 and 28 are deposited by photolithography, sublimation, electroplating or other deposition means known in the field. Preferred contact materials are Au, Cu, Ag, Pd, Pt, Ni and others known in the art. In some embodiments, the source contact 24 is unnecessary and may be omitted. The protruding layer 18 is a semiconductor with a small band gap, such as InGaAs, which helps to form an ohmic contact at the drain contact 28.
    Alternative versions 10A and 10D of the photodetector / transistor device are illustrated in FIGS. 5A and 5B, respectively. In the device 10A of FIG. 5, the collection well 20 forms a ring around the transfer well 22 and the gate contact 26. It should be noted that the source contact is not present in the device 10A.
    In FIG. 5B, the device 10B also uses a ring configuration. In this embodiment, the transfer well 22 forms a ring around the collection well 20 and the contact of the gate 26.
    The photodetector / transistor structures illustrated in FIGS. 1-2B, 5A and 5B offer some design advantages and manufacturing features. They understand :
    The charge well 42 is a buried p-type diffusion layer, surrounded by a detailed blank band gap material on all sides, except through the charge collection region. This allows the collection of the charge while maintaining the energy loss collected at a low level and separating the collection area from the surface of an InGaAs material. This buried layer minimizes both surface recombination and the contribution of the offset to noise.
    The integrated photodetector / transistor structure, plus a mechanism for discharging from the transfer well 22 may be in 5-8 micrometer pixels.
    By avoiding the reclosure noise of the prior art capacitor, the inherent noise of the pixel may be in orders of magnitude smaller than the prior art devices. The architecture of the present invention can achieve a higher sensitivity up to about 5 times (5X) allowing night imaging below the levels of starlight while reducing the pitch of the pixel to about 3 times ( 3X). Therefore, the detectors can operate in low light conditions; operate at higher operating temperatures for a given light level; operate with less energy since, for example, cooling is not necessary to improve performance; and higher resolution is achieved in a small detector with smaller lenses and higher chip density per wafer, resulting in lower costs.
    The integrated structure can be formed using only two different semiconductor materials (such as InP and InGaAs) and single scattering to obtain different collection and transfer wells.
    Discussion on possible embodiments
    The following are non-exclusive descriptions of possible embodiments of the present invention.
    An infrared photodetector comprises a low bandgap layer of a first conductivity type; a high bandgap layer of a first conductivity type covering the low bandgap layer; a protruding layer on a part of the large bandgap layer; a collection well of a second conductivity type in the high band gap layer and in contact with the low bandgap layer so that the low bandgap layer and the connection well form an infrared photodiode; a transfer well of a second conductivity type in the protruding layer and the high bandgap layer and spaced from the collection well and the low bandgap layer; and a transistor that includes the collection well, the transfer well, and a region between the collection well and the transfer well.
    An infrared photodetector may include a first low bandgap layer of a first conductivity type; a high bandgap layer of a first conductivity type may be on the first bandgap layer; a second low-bandgap layer on part of the large bandgap layer; a collection well of a second conductivity type may be located in the first low bandgap layer and in the wide bandgap layer; a transfer well of a second conductivity type may be located in the second low bandgap layer and the first bandgap layer, the transfer well being spaced laterally from the collection well and vertically from the first layer with a narrow band gap; and electrodes on the second low bandgap layer may be positioned to provide charge transfer from the collection well to the transfer well.
    A drain electrode coupled to the transfer wells; and a gate electrode is coupled to the region between the collection well and the transfer well.
    The gate and drain electrodes include Ti, Pt, Au, Ni, Cu, or combinations thereof.
    An insulating layer is located between the gate electrode and the high bandgap layer.
    The transfer well extends to an upper surface of the protruding layer.
    The transfer well extends to an upper surface of the second low bandgap layer.
    The transfer well extends to an upper surface of the high bandgap layer.
    The protruding layer comprises a semiconductor with a small band gap.
    The low bandgap layer and the protruding layer include InGaAs, and the high bandgap layer comprises InP.
    The transfer well extends to an upper surface of the high bandgap layer.
    The transfer well extends to an upper surface of the second low bandgap layer.
    A method for forming an infrared photodetector may include: depositing a low bandgap layer of a first conductivity type; depositing a high bandgap layer of a first conductivity type on the first low bandgap layer of a first conductivity type; forming a protruding layer on a portion of the high bandgap layer; and forming, by a single diffusion, a collection well of a second conductivity type located in the high bandgap layer and in the low bandgap layer, and a transfer well of a second type of conductivity located in the protruding layer and the high bandgap layer and spaced from the collection well and the low band gap layer.
    The method of the preceding paragraph may optionally include, in addition and / or alternatively, one or more of the additional characteristics, configurations and / or components:
    The method includes forming electrodes overlying the collection well, the transfer well is a region between the collection well and the transfer well.
    The protruding layer comprises the deposition of a second low bandgap layer on the high band gap layer; and selectively removing a portion of the second low bandgap layer to define the protruding layer.
    Formation by a single diffusion step comprises depositing an insulating layer above the high bandgap layer and the protruding layer; forming an opening in the insulation layer above the portion of the high bandgap layer to define a location of the collection well; forming an opening in the insulator layer above the protruding layer to define a location of the transfer well; and diffusing a dopant through the openings in the insulator layer to form the collection well and the transfer well. Although the invention has been described with reference to one or more exemplary embodiments, those skilled in the art will understand that various modifications may be made to the elements described herein, and equivalents may be used in their place, without departing of the scope of the invention. In addition, several modifications may be made to adapt a given situation or material to the teachings of this invention without departing from the essential scope thereof. Thus, it is contemplated that this invention is not limited to the particular disclosed embodiments, but that this invention will include all embodiments that are within the scope of the appended claims.
    权利要求:
    Claims (12)
    [1]
    An infrared photodetector comprising: a low bandgap layer of a first conductivity type; a high bandgap layer of a first conductivity type covering the low bandgap layer; a protruding layer on a part of the large bandgap layer; a collection well of a second conductivity type in the high bandgap layer and in contact with the low bandgap layer so that the low bandgap layer and the collection well form an infrared photodiode; a transfer well of a second conductivity type in the protruding layer and in the large bandgap layer and spaced from the collection well and the low bandgap layer; and a transistor that contains the collection well, the transfer well is a region between the collection well and the transfer well.
    [2]
    The infrared photodetector of claim 1, wherein the transistor also contains: a drain electrode coupled to the transfer wells; and a gate electrode coupled to the region between the collection well and the transfer well.
    [3]
    The infrared photodetector of claim 2, wherein the gate and drain electrodes comprise Ti, Pt, Au, Ni, Cu, or combinations thereof.
    [4]
    The infrared photodetector of claim 2, and further comprising: an insulator layer between the gate electrode and the high bandgap layer.
    [5]
    The infrared photodetector of claim 1, wherein the transfer well extends to an upper surface of the protruding layer.
    [6]
    The infrared photodetector of claim 1, wherein the collection well extends to an upper surface of the high band gap layer.
    [7]
    The infrared photodetector of claim 1, wherein the protruding layer comprises a low bandgap semiconductor.
    [8]
    The infrared photodetector of claim 1, wherein the low band gap layer and the protruding layer comprise InGaAs, and the high band gap layer comprises InP.
    [9]
    A method of forming an infrared photodetector, the method comprising: depositing a first low bandgap layer of a first conductivity type; depositing a high bandgap layer of a first conductivity type on the first low bandgap layer of a first conductivity type; the formation of a protruding layer on the high bandgap layer; and forming, in a single diffusion step, a collection well of a second conductivity type located in the high bandgap layer and in the first bandgap layer, and a transfer well of a second type of conductivity located in the high bandgap layer and spaced from the collection well and the first low bandgap layer.
    [10]
    The method of claim 9, further comprising: forming electrodes overlying the collection well, the transfer well, and a region between the collection well and the transfer well.
    [11]
    The method of claim 9, wherein the formation of the protruding layer comprises: depositing a second low band gap layer on the high band gap layer; and selectively removing a portion of the second low bandgap layer to define the protruding layer.
    [12]
    The method of claim 9, wherein the formation, by a single diffusion step, comprises: depositing an insulator layer over the high bandgap layer and the protruding layer; forming an opening in the insulation layer on a portion of the high bandgap layer to define a location of the collection well; forming an opening in the insulator layer on the protruding layer to define a location of the transfer well; and diffusing a dopant through the openings in the insulator layer to form the collection well and the transfer well.
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    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    US201462032918P| true| 2014-08-04|2014-08-04|
    US62/032,918|2014-08-04|
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